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| SUM55P06-19L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) -60 FEATURES D TrenchFETr Power MOSFET ID (A)d -55 -48 rDS(on) (W) 0.019 @ VGS = -10 V 0.025 @ VGS = -4.5 V Qg (Typ) 76 APPLICATIONS D Automotive Such As - High-Side Switch - Motor Drives - 12-V Boardnet TO-263 S G G DS Top View D Ordering Information: SUM55P06-19L SUM55P06-19L--E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_Cb TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit -60 "20 -55 -31 -150 -45 101 125c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mountb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Symbol RthJA RthJC Limit 40 1.2 Unit _C/W Document Number: 73059 S-41778--Rev. B, 04-Oct-04 www.vishay.com 1 SUM55P06-19L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -50 A 20 0.020 -120 0.015 0.019 0.033 0.041 0.025 S W -60 -1 -3 "100 -1 -50 -250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -30 V, RL = 0.54 W 30 ID ] -55 A, VGEN = -10 V, Rg = 2.5 W f = 1.0 MHz VDS = -30 V, VGS = -10 V, ID = -55 A VGS = 0 V, VDS = -25 V, f = 1 MHz 3500 390 290 76 16 19 5.2 12 15 80 230 20 25 120 350 ns W 115 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr 25_C)b -110 -240 IF = -50 A, VGS = 0 V -1.0 45 IF = -50 A, di/dt = 100 A/ms , m -2.6 0.059 -1.5 68 4.0 0.136 A V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73059 S-41778--Rev. B, 04-Oct-04 SUM55P06-19L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 200 Vishay Siliconix Output Characteristics 200 VGS = 10 thru 6 V I D - Drain Current (A) 5V 160 Transfer Characteristics TC = -55_C 25_C 160 I D - Drain Current (A) 120 4V 120 125_C 80 80 40 2V 0 0 3 6 9 12 15 3V 40 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transconductance 100 TC = -55_C g fs - Transconductance (S) 80 25_C 60 125_C r DS(on) - On-Resistance ( W ) 0.04 0.05 On-Resistance vs. Drain Current 0.03 VGS = 4.5 V 0.02 VGS = 10 V 40 20 0.01 0 0 6 12 18 24 30 36 42 48 54 60 ID - Drain Current (A) 5000 4500 4000 C - Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Coss Crss V GS - Gate-to-Source Voltage (V) Ciss 0.00 0 20 40 60 80 100 ID - Drain Current (A) 20 VDS = 30 V ID = 55 A Capacitance Gate Charge 16 12 8 4 0 0 20 40 60 80 100 120 140 160 Qg - Total Gate Charge (nC) Document Number: 73059 S-41778--Rev. B, 04-Oct-04 www.vishay.com 3 SUM55P06-19L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.2 1.9 rDS(on) - On-Resiistance (Normalized) 1.6 1.3 1.0 0.7 0.4 -50 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 75 ID = 10 mA 72 100 V (BR)DSS (V) I Dav (a) 69 10 IAV (A) @ TA = 25_C 66 1 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) 0.1 1 63 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 73059 S-41778--Rev. B, 04-Oct-04 SUM55P06-19L New Product THERMAL RATINGS Vishay Siliconix 60 50 Maximum Drain Current vs. Case Temperature 1000 Safe Operating Area *Limited by rDS(on) 100 I D - Drain Current (A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 I D - Drain Current (A) 10 ms 10 100 ms 1 ms 1 TC = 25_C Single Pulse 10 ms 100 ms, dc 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73059. Document Number: 73059 S-41778--Rev. B, 04-Oct-04 www.vishay.com 5 |
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